Method of insulating interconnects, and memory cell array with insulated interconnects
US6852628B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 19, 2002 |
| Grant date | Feb 8, 2005 |
| Priority date | — |
| Expiry date | Oct 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/48
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The process is used to electrically insulate adjacent metallic interconnects made from an aluminum-containing alloy, in particular for interconnects which are arranged on a DRAM cell array. A dielectric material is applied to the interconnects and the polymerizable material polymerizes under the action of heat. In a heat-treatment step the dielectric material is polymerized. A step of applying the dielectric material is carried out without a step of applying an interlayer between interconnects and dielectric material. On account of the self-passivation effect of aluminum, a thin Al2O3 film, which protects the interconnect from corrosion, is formed on the interconnects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.