Semiconductor device and method of manufacturing the same
US6852651B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 2, 2001 |
| Grant date | Feb 8, 2005 |
| Priority date | — |
| Expiry date | Oct 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a semiconductor device in which an interlayer insulating film having a low dielectric constant is formed by covering wiring primarily made of a copper film, and to a method of manufacturing the same. In manufacturing the semiconductor device an insulating film having a low dielectric constant is formed on a substrate by converting a film-forming gas into a plasma for reaction. The method includes forming a low-pressure insulating film on the substrate by coverting the film-forming gas at a first gas pressure into a plasma and forming a high-pressure insulating film on the low-pressure insulating film by converting the film-forming gas at second gas pressure, higher than the first gas pressure, into a plasma and reaction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.