Emission process for a single photon, corresponding semiconducting device and manufacturing process
US6852993B2 · kind B2 · utility
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46Claims
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Key dates
| Filing date | May 5, 2003 |
| Grant date | Feb 8, 2005 |
| Priority date | — |
| Expiry date | Aug 8, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/962
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An integrated circuit includes a semiconductor device forming a single photon source, and includes a MOS transistor on a silicon substrate. The MOS transistor has a mushroom shaped gate for outputting a single electron on its drain in a controlled manner in response to a control voltage applied to its gate. The transistor also includes at least one silicon compatible quantum box. The quantum box is electrically coupled to the drain region of the transistor, and is capable of outputting a single photon on reception of a single electron emitted by the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.