Apparatus and methods for monitoring self-aligned contact arrays using voltage contrast inspection
US6855568B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2001 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | Oct 24, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/307
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed are methods and apparatus for detecting defects in a partially fabricated semiconductor device with self-aligned contacts. The self-aligned contacts are formed from a first layer with a plurality of contact portions, a second layer with a plurality of conductive lines that are each aligned proximate to an associated underlying contact portion, and a third insulating layer formed over the conductive lines and their proximate underlying contact portions. The third insulating layer has a plurality of vias formed therein that are each formed alongside a one of the conductive lines and over its proximate underlying contact portion. A charged particle beam is scanned over a portion of the vias to form a voltage contrast image of each via. When a minority of the vias in the image have a significantly different brightness level than a majority of the vias, it is then determined that the minority of vias have defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.