Method for manufacturing capacitor
US6855600B2 · kind B2 · utility
0Cited by
3References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 5, 2003 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | Apr 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02178
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention realizes high integration by utilizing an aluminum oxide as a capacitor insulating layer having a high dielectric constant, improving characteristics of a semiconductor device by using a low temperature vapordeposition and a low temperature annealing, improving leakage current characteristics by utilizing titanium as an upper electrode of the capacitor and reduces manufacturing costs by simplifying the capacitor manufacturing process. Therefore, the present invention is very useful and effective.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.