Method of forming self-aligned contact structure with locally etched gate conductive layer
US6855610B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2002 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | Apr 12, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a self-aligned contact structure with a locally etched conductive layer comprises the steps of: preparing a substrate formed with gate structures comprising a first conductive layer, a second conductive layer, and an insulating layer; depositing a photoresist material layer on the substrate; performing a lithographic step with a bit-line contact node photomask or a bit-line contact photomask to expose a portion of the surface of the substrate; etching the exposed second conductive layer with an etchant; removing the remaining photoresist material layer; forming a sidewall spacer on the sidewalls of each gate structure; forming a dielectric layer to cover the substrate; and performing lithographic and etching steps to remove the dielectric layer and to form self-aligned contact structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.