Method for fabricating a bipolar transistor

US6855612B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Karl-Heinz Muller · Wissen, DE
• Konrad Wolf · Walzbachtal, DE

Key dates

• Filing date: May 4, 2001
• Grant date: Feb 15, 2005
• Expiry date: May 4, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D10/054

Abstract

A method for producing bipolar transistors with the aid of selective epitaxy for producing a collector and base. The method includes widening the area of the base either by the isotropic etching of the conductive layer or by the oxidation of the conductive layer and by the subsequent removal of the oxide layer. This widening of the area of the base prevents the occurrence of short-circuits between the emitter and the collector during the subsequent production of the base.