Radiation hardened semiconductor device
US6855618B2 · kind B2 · utility
2Cited by
16References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2002 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | Oct 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76202
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a radiation hardened semiconductor device, having defined active region and isolation region. The isolation region containing an isolation material and active region containing a transition region between active and isolation region, sometimes denoted a bird's beak region. Wherein the transition region is implanted with germanium and boron, to prevent formation of leakage paths between active devices, or within an active device. The implanted area can be further limited to that area of the transition region that is adapted to be covered by a gate material, such as polysilicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.