Method for making contact with a doping region of a semiconductor component

US6855630B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Alexander Ruf · Dresden, DE
• Norbert Urbansky · Dresden, DE
• Wilhelm Claussen · Dresden, DE
• Thomas Gartner · Hamburg, DE
• Sven Schmidbauer · Dresden, DE

Key dates

• Filing date: Jul 7, 2003
• Grant date: Feb 15, 2005
• Expiry date: Aug 2, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76856
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method makes contact with a doping region formed at a substrate surface of a substrate. An insulating layer is applied on the substrate surface and a contact hole is formed in the insulating layer. A metal-containing layer is subsequently deposited on the insulating layer and the surface region of the doping region that is uncovered by the contact hole. In a subsequent thermal process having two steps, first the metal-containing layer is reacted with the silicon of the doping region to form a metal silicide layer and then the rest of the metal-containing layer is converted into a metal-nitride-containing layer in a second thermal step.