Method for fabricating a gate structure
US6855643B2 · kind B2 · utility
16Cited by
17References
51Claims
0Family size
Inventors
Key dates
| Filing date | Jul 12, 2002 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | Oct 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a gate structure having a polysilicon electrode using an oxygen-free chemistry to etch the polysilicon. In one embodiment, the chemistry further includes nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.