Ultra high-speed Si/SiGe modulation-doped field effect transistors on ultra thin SOI/SGOI substrate
US6855963B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2003 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | Aug 29, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6748
Abstract
A silicon and silicon germanium based semiconductor MODFET device design and method of manufacture. The MODFET design includes a high-mobility layer structure capable of ultra high-speed, low-noise for a variety of communication applications including RF, microwave, sub-millimeter-wave and millimeter-wave. The epitaxial field effect transistor layer structure includes critical (vertical and lateral) device scaling and layer structure design for a high mobility strained n-channel and p-channel transistor incorporating silicon and silicon germanium layers to form the optimum modulation-doped heterostructure on an ultra thin SOI or SGOI substrate capable of achieving greatly improved RF performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.