Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology
US6855985B2 · kind B2 · utility
114Cited by
43References
162Claims
0Family size
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Key dates
| Filing date | Sep 29, 2002 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | Mar 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each of the devices is extremely compact, both laterally and vertically, and can be fully isolated from all other devices in the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.