Michael E. Cornell
59Patents
20h-index
17Co-inventors
85Inventor score
Filing activity: May 6, 1991 → Feb 24, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6239463A | Low resistance power MOSFET or other device containing silicon-germanium layer | Electricity | 204 | Expired |
| US5386136A | Lightly-doped drain MOSFET with improved breakdown characteristics | Emerging Cross-Sectional Technologies | 143 | Expired |
| US5426328A | BICDMOS structures | Emerging Cross-Sectional Technologies | 127 | Expired |
| US6855985B2 | Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology | Electricity | 114 | Expired |
| US5514608A | Method of making lightly-doped drain DMOS with improved breakdown characteristics | Emerging Cross-Sectional Technologies | 86 | Expired |
| US6861701B2 | Trench power MOSFET with planarized gate bus | Electricity | 72 | Expired |
| US6900091B2 | Isolated complementary MOS devices in epi-less substrate | Electricity | 71 | Expired |
| US5374569A | Method for forming a BiCDMOS | Emerging Cross-Sectional Technologies | 67 | Expired |
| US5374843A | Lightly-doped drain MOSFET with improved breakdown characteristics | Electricity | 63 | Expired |
| US5648281A | Method for forming an isolation structure and a bipolar transistor on a semiconductor substrate | Emerging Cross-Sectional Technologies | 50 | Expired |
| US5559044A | BiCDMOS process technology | Emerging Cross-Sectional Technologies | 49 | Expired |
| US6943426B2 | Complementary analog bipolar transistors with trench-constrained isolation diffusion | Electricity | 43 | Expired |
| US5726477A | Threshold adjustment in field effect semiconductor devices | Electricity | 42 | Expired |
| US5648288A | Threshold adjustment in field effect semiconductor devices | Electricity | 34 | Expired |
| US5751054A | Zener diodes on the same wafer with BiCDMOS structures | Emerging Cross-Sectional Technologies | 34 | Expired |
| US7176548B2 | Complementary analog bipolar transistors with trench-constrained isolation diffusion | Electricity | 29 | Expired |
| US5541125A | Method for forming a lateral MOS transistor having lightly doped drain formed along with other transistors in the same substrate | Emerging Cross-Sectional Technologies | 25 | Expired |
| US5416039A | Method of making BiCDMOS structures | Emerging Cross-Sectional Technologies | 24 | Expired |
| US7211863B2 | Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology | Electricity | 22 | Expired |
| US5422508A | BiCDMOS structure | Emerging Cross-Sectional Technologies | 21 | Expired |
| US5618743A | MOS transistor having adjusted threshold voltage formed along with other transistors | Emerging Cross-Sectional Technologies | 20 | Expired |
| US7745883B2 | Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology | Electricity | 19 | Active |
| US6906386B2 | Testable electrostatic discharge protection circuits | Emerging Cross-Sectional Technologies | 19 | Expired |
| US5541123A | Method for forming a bipolar transistor having selected breakdown voltage | Emerging Cross-Sectional Technologies | 18 | Expired |
| US5643820A | Method for fabricating an MOS capacitor using zener diode region | Emerging Cross-Sectional Technologies | 17 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.