Semiconductor device and method for fabricating the same
US6856020B2 · kind B2 · utility
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6References
2Claims
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Key dates
| Filing date | Sep 27, 2002 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | Apr 3, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plurality of metal interconnections are formed on a semiconductor substrate. The semiconductor substrate is held on a sample stage in a reactor chamber of a plasma processing apparatus and a material gas containing C5F8, C3F6, or C4F6 as a main component is introduced into the reactor chamber, so that a first fluorine-containing organic film having cavities at positions between the metal interconnections is deposited between the metal interconnections and on the top surfaces of the metal interconnections.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.