Patent · US Expired

Line profile asymmetry measurement using scatterometry

US6856408B2 · kind B2 · utility

97Cited by
34References
56Claims
0Family size

Assignee

Inventor

Key dates

Filing dateFeb 28, 2002
Grant dateFeb 15, 2005
Priority date
Expiry dateSep 27, 2022

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/70633
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A method of and apparatus for measuring line profile asymmetries in microelectronic devices comprising directing light at an array of microelectronic features of a microelectronic device, detecting light scattered back from the array comprising either or both of one or more angles of reflection and one or more wavelengths, and comparing one or more characteristics of the back-scattered light by examining data from complementary angles of reflection or performing a model comparison.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.