Spin-valve type thin film magnetic element having bias layers and ferromagnetic layers
US6856494B2 · kind B2 · utility
6Cited by
11References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2001 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | Mar 15, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3932
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a spin-valve type thin film magnetic element that is able to certainly align the magnetization direction of the free magnetic layer in one direction by improving the exchange coupling magnetic field generated between the bias layers and ferromagnetic layer, and is able to reduce the thickness of the bias layer to be smaller than the thickness of the bias layer of the conventional spin-valve type thin film magnetic element for obtaining the same magnitude of the exchange coupling magnetic layer as that in the conventional spin-valve type thin film magnetic element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.