Method of manufacturing ferroelectric capacitor
US6857172B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 13, 2001 |
| Grant date | Feb 22, 2005 |
| Priority date | — |
| Expiry date | Jan 8, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49163
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
According to the present invention, a method of manufacturing a ferroelectric capacitor using a ferroelectric thin film, includes steps of: forming a lower conductive layer on a semiconductor substrate; coating solution of ferroelectric coking including organic solvent and organometallic complex on the lower conductive layer; performing a heating process for coated solution at temperature, to decompose said organometallic complex in solution of ferroelectric coking, or more and ferroelectric crystallization temperature or below to form said metal compound thin film; forming an upper conductive layer on said metal compound thin film; and performing a heating process for said metal compound thin film at ferroelectric crystallization temperature or more to form said ferroelectric thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.