Selective growth method, and semiconductor light emitting device and fabrication method thereof
US6858081B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2003 |
| Grant date | Feb 22, 2005 |
| Priority date | — |
| Expiry date | Jan 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02639
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a selective growth method, growth interruption is performed at the time of selective growth of a crystal layer on a substrate. Even if the thickness distribution of the crystal layer becomes non-uniform at the time of growth of the crystal layer, the non-uniformity of the thickness distribution of the crystal layer can be corrected by inserting the growth interruption. As a result of growth interruption, an etching rate at a thick portion becomes higher than that at a thin portion, to eliminate the difference in thickness between the thick portion and the thin portion, thereby solving the problem associated with degradation of characteristics due to a variation in thickness of the crystal layer, for example, an active layer. The selective growth method is applied to fabrication of a semiconductor light emitting device including an active layer as a crystal layer formed on a crystal layer having a three-dimensional shape by selective growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.