High speed composite p-channel Si/SiGe heterostructure for field effect devices
US6858502B2 · kind B2 · utility
23Cited by
27References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2001 |
| Grant date | Feb 22, 2005 |
| Priority date | — |
| Expiry date | May 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/213
Abstract
A method and a layered heterostructure for forming p-channel field effect transistors is described incorporating a plurality of semiconductor layers on a semiconductor substrate, a composite channel structure of a first epitaxial Ge layer and a second compressively strained SiGe layer having a higher barrier or a deeper confining quantum well and having extremely high hole mobility. The invention overcomes the problem of a limited hole mobility for a p-channel device with only a single compressively strained SiGe channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.