Inventor · Harriseahead, GB

Richard Hammond

68Patents
18h-index
27Co-inventors
84Inventor score

Filing activity: Sep 3, 1997 → Apr 14, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US6995430B2 Strained-semiconductor-on-insulator device structures Electricity 392 Expired
US6831292B2 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same Emerging Cross-Sectional Technologies 283 Expired
US6350993B1 High speed composite p-channel Si/SiGe heterostructure for field effect devices Electricity 216 Expired
US7074623B2 Methods of forming strained-semiconductor-on-insulator finFET device structures Electricity 173 Expired
US10134837B1 Porous silicon post processing Electricity 137 Active
US7709828B2 RF circuits including transistors having strained material layers Electricity 132 Active
US10784348B2 Porous semiconductor handle substrate Electricity 106 Active
US6583015B2 Gate technology for strained surface channel and strained buried channel MOSFET devices Electricity 100 Expired
US6900094B2 Method of selective removal of SiGe alloys Electricity 96 Expired
US7109516B2 Strained-semiconductor-on-insulator finFET device structures Electricity 85 Expired
US7420201B2 Strained-semiconductor-on-insulator device structures with elevated source/drain regions Electricity 77 Expired
US6463583B1 Dynamic injection of execution logic into main dynamic link library function of the original kernel of a windowed operating system Physics 69 Expired
US6779187B1 Method and system for dynamic interception of function calls to dynamic link libraries into a windowed operating system Physics 58 Expired
US5974470A System for reducing conflicts among dynamic link library modules by aliasing modules Emerging Cross-Sectional Technologies 54 Expired
US9780210B1 Backside semiconductor growth Electricity 45 Active
US6550060B1 Method and system for dynamic injection of dynamic link libraries into a windowed operating system Physics 28 Expired
US7217603B2 Methods of forming reacted conductive gate electrodes Electricity 23 Expired
US6858502B2 High speed composite p-channel Si/SiGe heterostructure for field effect devices Electricity 23 Expired
US6982474B2 Reacted conductive gate electrodes Electricity 16 Expired
US6680496B1 Back-biasing to populate strained layer quantum wells Electricity 13 Expired
US6933518B2 RF circuits including transistors having strained material layers Electricity 13 Expired
US7588994B2 Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain Electricity 13 Active
US7259388B2 Strained-semiconductor-on-insulator device structures Electricity 12 Expired
US6846720B2 Method to reduce junction leakage current in strained silicon on silicon-germanium devices Electricity 12 Expired
US7297612B2 Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes Electricity 12 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.