Method for electrically characterizing charge sensitive semiconductor devices
US6858530B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2003 |
| Grant date | Feb 22, 2005 |
| Priority date | — |
| Expiry date | Aug 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and structure for the electrical characterization of a semiconductor device comprising, first, forming a hole having a diameter less than 0.15 μm, wherein the hole is created using focused ion beam (FIB) etching, and through at least a protective cap layer formed over the device. The FIB etching occurs in an electron mode using a beam current less than 35 ρA with an aperture size less than 50 μm, and at an acceleration voltage of about 50 kV. Second, the surface of the hole is coated with a metal, preferably using chemical vapor deposition (CVD) and preferably using a FIB device. Third, a metal pad is deposited, preferably by FIB CVD, over the hole. Fourth, the pad is probed to determine characteristics and/or detect defects of the electrical device. The present invention allows for electrical characterization without causing damage to the device or its features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.