Long-Term sputtering method
US6860974B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2002 |
| Grant date | Mar 1, 2005 |
| Priority date | — |
| Expiry date | Jun 28, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/251
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There are provided techniques of forming a back reflecting layer with constant characteristics throughout long-term film formation and forming a metal oxide film so as to be able to maintain a current of a bottom cell and thereby keep a short-circuit current Jsc of a solar cell constant over a long period of time. A sputtering method is a method of forming a stack of a metal film and a metal oxide film, comprising the step 1 of forming a metal layer on a substrate, the step 2 of bringing a surface of the metal layer into contact with active oxygen, and the step 3 of forming a metal oxide film thereon after the step 2, wherein in the step 2 an amount of active oxygen at a first substrate position is different from that at a second substrate position.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.