Method of manufacturing high purity zirconium and hafnium
US6861030B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 29, 2001 |
| Grant date | Mar 1, 2005 |
| Priority date | — |
| Expiry date | Mar 18, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/68
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention relates to high-purity zirconium or hafnium with minimal impurities, particularly where the content of alkali metal elements such as Na, K; radioactive elements such as U, Th; transitional metals or heavy metals or high melting point metal elements such as Fe, Ni, Co, Cr, Cu, Mo, Ta, V; and gas components such as C, O, etc. is extremely reduced, as well as to an inexpensive manufacturing method of such high-purity zirconium or hafnium, thereby reducing the impurities hindering the guarantee of the operational performance of semiconductors. The present invention further relates to an inexpensive and safe manufacturing method of high-purity zirconium or hafnium powder from hydrogenated high-purity zirconium or hafnium powder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.