Method for manufacturing gallium nitride compound semiconductor and light emitting element
US6861270B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Mar 6, 2002 |
| Grant date | Mar 1, 2005 |
| Priority date | — |
| Expiry date | Mar 6, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/813
Abstract
A method for manufacturing a GaN compound semiconductor which can improve light emitting efficiency even when dislocations are present. An n type AlGaN layer, a undoped AlGaN layer, and a p type AlGaN layer are laminated on a substrate to obtain a double hetero structure. When the undoped AlGaN layer is formed, droplets of Ga or Al are formed on the n type AlGaN layer. The compositional ratio of Ga and Al in the undoped AlGaN layer varies due to the presence of the droplets, creating a spatial fluctuation in the band gap. Because of the spatial fluctuation in the band gap, the percentage of luminous recombinations of electrons and holes is increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.