Semiconductor device and production method thereof
US6861284B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 2, 2003 |
| Grant date | Mar 1, 2005 |
| Priority date | — |
| Expiry date | Jan 2, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/4602
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device including an insulating core substrate, a plurality of layers of wiring patterns on the core substrate and insulating layers interposed between the wiring patterns, each adjacent pair of the wiring patterns being electrically connected through a conductor portion penetrating through the insulating layer interposed between them, each of the insulating layers is formed integrally, semiconductor chips thinner than one layer of the insulating layer are mounted into at least one of the insulating layers, and the semiconductor chips are electrically connected to one layer of the wiring pattern of one insulating layer adjacent on the side of the core substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.