Process for manufacturing thin film transistor on unannealed glass substrate
US6861299B2 · kind B2 · utility
8Cited by
7References
26Claims
0Family size
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Key dates
| Filing date | Apr 2, 2003 |
| Grant date | Mar 1, 2005 |
| Priority date | — |
| Expiry date | Apr 2, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
Abstract
Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500° C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.