Semiconductor integrated circuit device and method of manufacturing thereof
US6861304B2 · kind B2 · utility
10Cited by
9References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2003 |
| Grant date | Mar 1, 2005 |
| Priority date | — |
| Expiry date | Feb 4, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit device wherein plural field effect transistors having different threshold values are integrated on one chip by forming plural gate electrodes of silicon-germanium mixed crystals having different germanium contents. By varying the germanium content of the gate electrode material, a work function with respect to the channel region can be varied, so a semiconductor integrated circuit device wherein plural field effect transistors having different threshold voltage values are integrated on one chip can be manufactured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.