Patent · US Expired

Method for fabrication of SiGe layer having small poly grains and related structure

US6861308B2 · kind B2 · utility

2Cited by
1References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 13, 2003
Grant dateMar 1, 2005
Priority date—
Expiry dateMay 13, 2023

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/0109
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A disclosed embodiment is a method for fabricating a SiGe layer, the method comprising depositing a silicon buffer layer over a single crystalline region and at least one isolation region at a first pressure, where the silicon buffer layer is continuous, i.e. comprises small poly grains, over the at least one isolation region. The method further includes forming a silicon germanium layer over the silicon buffer layer at a second pressure, where the silicon germanium layer is also continuous, i.e. comprises small poly grains, over the at least one isolation region. In one embodiment, the first pressure is less than the second pressure. In other embodiments, a structure is fabricated according to the above method.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.