Patent · US Expired

Method of making starting material for chip fabrication comprising a buried silicon nitride layer

US6861320B1 · kind B1 · utility

7Cited by
23References
3Claims
0Family size

Assignee

Inventor

Key dates

Filing dateApr 4, 2003
Grant dateMar 1, 2005
Priority date—
Expiry dateApr 24, 2023

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76243
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The invention provides a method of making silicon-on-insulator SOI substrates with nitride buried insulator layer by implantation of molecular deuterated ammonia ions ND3+, instead of implanting nitrogen ions (N+, or N2+) as is done in prior art nitride SOI processes. The resultant structure, after annealing, has a buried insulator with a defect density which is substantially lower than in prior art nitride SOI. The deuterated nitride SOI substrates allow much better heat dissipation than SOI with a silicon dioxide buried insulator. These substrates can be used for manufacturing of high speed and high power dissipation monolithic integrated circuits.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.