Process for semiconductor apparatus including forming an insulator and a semiconductor film on the backside of the wafer and removing the semiconductor film from the backside
US6861359B2 · kind B2 · utility
6Cited by
2References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 20, 2003 |
| Grant date | Mar 1, 2005 |
| Priority date | — |
| Expiry date | May 20, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to prevent dusting from a peripheral end portion of a wafer, a semiconductor film formed is removed from at least the entire surface of the backside of the wafer and from the peripheral portion of the wafer by etching at a high etching rate relative to an insulating film present beneath the semiconductor film, to realize a semiconductor apparatus in which the semiconductor film is formed in an integrated circuit pattern region on the face side of the wafer.Thus, the problem of dusting from the peripheral portion of the wafer is obviated, and a semiconductor apparatus with high reliability is realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.