Semiconductor apparatus of which reliability of interconnections is improved and manufacturing method of the same
US6861759B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2003 |
| Grant date | Mar 1, 2005 |
| Priority date | — |
| Expiry date | Jun 27, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor apparatus includes an under layer, a first insulating layer and a first conductive portion. The under layer is formed above a substrate. The first insulating layer is formed on the under layer. The first conductive portion is formed in a first concave portion which passes through the first insulating layer to the under layer. The first conductive portion includes a first barrier metal layer and a first metal portion. The first barrier metal layer is formed on a side wall and a bottom surface of the first concave portion. The first metal portion is formed on the first barrier metal layer such that the rest of the first concave portion is filled with the first metal portion. The first metal portion includes a first alloy including copper and aluminium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.