High-frequency semiconductor device
US6861906B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 2001 |
| Grant date | Mar 1, 2005 |
| Priority date | — |
| Expiry date | May 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/21178
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high-frequency semiconductor device according to the present invention achieves improvements in degradation of noise characteristics and a reduction in gain, and an improvement in reduction in power efficiency while suppressing a concentration of a current to multifinger HBTs. In the multifinger HBTs constituting a first stage and an output stage of an amplifier 10, basic HBTs 14 that constitute the multifinger HBT 12 corresponding to the first stage, are each made up of an HBT 14a and an emitter resistor 14b connected to the corresponding emitter of the HBT 14a, whereas basic HBTs 18 that constitute the multifinger HBT 16 corresponding to the output stage, are each comprised of an HBT 18a and a base resistor 18c connected to the corresponding base of the HBT 18a. The high-frequency semiconductor device according to the present invention is useful as a high output power amplifier used in satellite communications, ground microwave communications, mobile communications, etc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.