Spacer chalcogenide memory method and device
US6864503B2 · kind B2 · utility
231Cited by
18References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 9, 2002 |
| Grant date | Mar 8, 2005 |
| Priority date | — |
| Expiry date | Oct 27, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/90
Abstract
The present invention includes devices and methods to form memory cell devices including a spacer comprising a programmable resistive material alloy. Particular aspects of the present invention are described in the claims, specification and drawings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.