Semiconductor device
US6864584B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2002 |
| Grant date | Mar 8, 2005 |
| Priority date | — |
| Expiry date | Feb 7, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In extremely minute copper wiring the width or the thickness of which is equal to or shorter than approximately the double length of the mean free path of a copper atom, a value of the resistance may be larger, compared with aluminum wiring of the same extent and it is difficult to realize wiring having small resistance. To solve such a problem, aluminum wiring is used for wiring having form in which the respective resistivities ρ of both wirings have the relation of ρAl<ρCu and copper wiring is used for wiring having form in which the respective resistivities ρ of both wirings have the relation of ρAl≧ρCu. As a result, a semiconductor device which has small resistance, transmits a signal at high speed and is provided with a multilayer wiring layer can be realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.