Wide dynamic range and high speed voltage mode sensing for a multilevel digital non-volatile memory
US6865099B2 · kind B2 · utility
9Cited by
3References
91Claims
0Family size
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Key dates
| Filing date | Aug 1, 2002 |
| Grant date | Mar 8, 2005 |
| Priority date | — |
| Expiry date | Oct 4, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5634
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A high speed voltage mode sensing is provided for a digital multibit non-volatile memory integrated system. An embodiment has a local source follower stage followed by a high speed common source stage. Another embodiment has a local source follower stage followed by a high speed source follower stage. Another embodiment has a common source stage followed by a source follower. An auto zeroing scheme is used. A capacitor sensing scheme is used. Multilevel parallel operation is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.