Negatively charged wordline for reduced subthreshold current
US6865119B2 · kind B2 · utility
13Cited by
5References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 10, 2003 |
| Grant date | Mar 8, 2005 |
| Priority date | — |
| Expiry date | Mar 2, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An invention is provided for reducing subthreshold current in memory core cells. A memory array having a plurality of memory core cells is provided. Each memory core cell in the memory array is selectable using a word line. A selected word line addressing a particular memory core cell is charged to a positive voltage. In addition, unselected wordlines of the memory array are charged to a negative voltage. In this manner, subthreshold current associated with unselected memory core cells is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.