Apparatus and method to improve the resolution of photolithography systems by improving the temperature stability of the reticle
US6866970B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Oct 7, 2002 |
| Grant date | Mar 15, 2005 |
| Priority date | — |
| Expiry date | Dec 8, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask for use in a photolithographic process. The mask includes a plate or substrate having first and second opposite surfaces, a first image on the first surface of the substrate and a second image on the second surface of the substrate. When the mask is used in a photolithographic process, energy is reflected by the first image prior to entering the substrate and energy is reflected by the second image after passing through the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.