Patent · US Expired

Apparatus and method to improve the resolution of photolithography systems by improving the temperature stability of the reticle

US6866970B2 · kind B2 · utility

0Cited by
1References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 7, 2002
Grant dateMar 15, 2005
Priority date
Expiry dateDec 8, 2022

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F1/50
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A mask for use in a photolithographic process. The mask includes a plate or substrate having first and second opposite surfaces, a first image on the first surface of the substrate and a second image on the second surface of the substrate. When the mask is used in a photolithographic process, energy is reflected by the first image prior to entering the substrate and energy is reflected by the second image after passing through the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.