ArF photoresist copolymers
US6866984B2 · kind B2 · utility
43Cited by
46References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2003 |
| Grant date | Mar 15, 2005 |
| Priority date | — |
| Expiry date | Dec 18, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08F232/04
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A photoresist copolymer is prepared from one or more carboxy-substituted bicycloalkene monomers, and this copolymer is used to prepare a photoresist for submicrolithography processes employing deep ultraviolet (ArF) as a light source. In addition to having high etch resistance and thermal resistance, the photoresist has good adhesiveness to the substrate and can be developed in a TMAH solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.