Lateral phase change memory and method therefor
US6867425B2 · kind B2 · utility
43Cited by
3References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 13, 2002 |
| Grant date | Mar 15, 2005 |
| Priority date | — |
| Expiry date | Dec 13, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Briefly, in accordance with an embodiment of the invention, a lateral phase change memory and a method to manufacture a phase change memory is provided. The method may include forming a conductor material over a substrate and patterning the conductor material to form two electrodes from the conductor material, wherein the two electrodes are separated by a sub-lithographic distance. The method may further include forming a phase change material between the two electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.