Guy Wicker
58Patents
24h-index
48Co-inventors
88Inventor score
Filing activity: Jan 23, 1986 → Aug 31, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5166758A | Electrically erasable phase change memory | Physics | 629 | Expired |
| US6339544B1 | Method to enhance performance of thermal resistor device | Electricity | 429 | Expired |
| US6429064B1 | Reduced contact area of sidewall conductor | Electricity | 391 | Expired |
| US6621095B2 | Method to enhance performance of thermal resistor device | Electricity | 389 | Expired |
| US6597009B2 | Reduced contact area of sidewall conductor | Electricity | 389 | Expired |
| US6673700B2 | Reduced area intersection between electrode and programming element | Physics | 375 | Expired |
| US6314014A | Programmable resistance memory arrays with reference cells | Physics | 317 | Expired |
| US5341328A | Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life | Physics | 312 | Expired |
| US5714768A | Second-layer phase change memory array on top of a logic device | Electricity | 296 | Expired |
| US5414271A | Electrically erasable memory elements having improved set resistance stability | Physics | 265 | Expired |
| US4766471A | Thin film electro-optical devices | Electricity | 230 | Expired |
| US5159661A | Vertically interconnected parallel distributed processor | Physics | 226 | Expired |
| US5694054A | Integrated drivers for flat panel displays employing chalcogenide logic elements | Physics | 199 | Expired |
| US6969866B1 | Electrically programmable memory element with improved contacts | Physics | 149 | Expired |
| US6075719A | Method of programming phase-change memory element | Physics | 108 | Expired |
| US5180690A | Method of forming a layer of doped crystalline semiconductor alloy material | Emerging Cross-Sectional Technologies | 60 | Expired |
| US6608773B2 | Programmable resistance memory array | Physics | 51 | Expired |
| US7646630B2 | Programmable matrix array with chalcogenide material | Electricity | 47 | Expired |
| US7839674B2 | Programmable matrix array with chalcogenide material | Physics | 46 | Active |
| US6867425B2 | Lateral phase change memory and method therefor | Electricity | 43 | Expired |
| US7499315B2 | Programmable matrix array with chalcogenide material | Physics | 33 | Active |
| US6567296B1 | Memory device | Physics | 29 | Expired |
| US7205562B2 | Phase change memory and method therefor | Electricity | 25 | Expired |
| US5694146A | Active matrix LCD array employing thin film chalcogenide threshold switches to isolate individual pixels | Electricity | 24 | Expired |
| US5757446A | Liquid crystal display matrix array employing ovonic threshold switching devices to isolate individual pixels | Electricity | 23 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.