Method for producing silicon single crystal having no flaw
US6869478B2 · kind B2 · utility
11Cited by
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5Claims
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Assignee
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Key dates
| Filing date | Mar 19, 2001 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | May 9, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1068
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing a silicon ingot having no defect over a wide range of region with stability and good reproducibility, wherein when a silicon single crystal (11) is pulled up form a silicon melt (13), the shape of a solid-liquid interface (14) which a boundary between the silicon melt (13) and the silicon single crystal (11) and the temperature distribution on the side face (11b) of a single crystal under being pulled up are appropriately controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.