Substrate for epitaxial growth
US6869702B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2003 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Dec 17, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate for epitaxial growth allowing formation of an Al-containing group III nitride film having high crystal quality is provided. A nitride film containing at least Al is formed on a 6H—SiC base by CVD at a temperature of at least 1100° C., for example. The substrate for epitaxial growth allowing formation of an Al-containing group III nitride film having high crystal quality is obtained by setting the dislocation density of the nitride film to not more than 1×1011/cm2, the full width at half maximum of an X-ray rocking curve for (002) plane to not more than 200 seconds and the full width at the half maximum of the X-ray rocking curve for (102) plane to not more than 1500 seconds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.