Method for producing organic electronic devices on deposited dielectric materials
US6869821B2 · kind B2 · utility
10Cited by
8References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2002 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Feb 7, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/466
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A deposited dielectric (e.g., PECVD silicon nitride) formed on an inexpensive glass or plastic foil substrate is modified to facilitate the formation of high mobility organic semiconductor films. In one embodiment, the dielectric is plasma treated using nitrogen or argon gas to reduce the surface roughness of the dielectric layer below 5 nm (peak-to-valley). An organic semiconductor film (e.g., pentacene) grown on the modified dielectric exhibits high mobility and large polycrystalline grain sizes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.