Method for improving a physical property defect value of a gate dielectric
US6869862B2 · kind B2 · utility
0Cited by
7References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2003 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Aug 8, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for improving a physical property of a substrate, a method for manufacturing an integrated circuit, and an integrated circuit manufactured using the aforementioned method. In one aspect of the invention, the method for improving a physical property of a substrate includes subjecting the substrate to effects of a plasma process 830, wherein the substrate has a physical property defect value associated therewith subsequent to the plasma process. The method further includes exposing the substrate to an ultraviolet (UV) energy source 840 to improve the physical property defect value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.