Method of fabricating a MOSFET device with metal containing gate structures
US6869868B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2002 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Dec 13, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a composite gate structure for a planar MOSFET device, as well as for vertical, double gate, FINFET device, has been developed. The method features a composite gate structure comprised of an overlying silicon gate structure shape, and an underlying titanium nitride gate structure shape. The titanium nitride component allows a lower work function, and thus lower device operating voltages to be realized when compared to counterpart gate structures formed with only polysilicon. A novel, two step gate structure definition procedure, featuring an anisotropic first etch procedure for definition of the polysilicon gate structure shape, followed by a wet or dry isotopic second etch procedure for definition of the titanium nitride gate structure shape, is employed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.