Semiconductor device having groove and method of fabricating the same
US6869891B2 · kind B2 · utility
1Cited by
2References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 22, 2002 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Apr 22, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/966
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a plurality of grooves of a semiconductor device having of a plurality of MOS transistors is provided. A plurality of photoresist patterns are formed on a semiconductor substrate. Ions are implanted on a portion of the semiconductor substrate using the plurality of photoresist patterns as a mask. The plurality of photoresist patterns are removed. An oxide layer is formed on the semiconductor substrate having the implanted ions by thermal oxidation. The plurality of grooves are formed on the semiconductor substrate by removing the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.