Nak-Jin Son
16Patents
5h-index
26Co-inventors
66Inventor score
Filing activity: Apr 22, 2002 → Jul 14, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7223649B2 | Method of fabricating transistor of DRAM semiconductor device | Electricity | 58 | Expired |
| US9012321B1 | Method of manufacturing semiconductor device | Electricity | 18 | Active |
| US9123550B2 | Semiconductor devices using air spaces to separate conductive structures and methods of manufacturing the same | Electricity | 7 | Active |
| US9159730B2 | Methods for fabricating a semiconductor device | Electricity | 7 | Active |
| US9564340B2 | Method of manufacturing semiconductor device | Electricity | 5 | Active |
| US7524733B2 | Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same | Emerging Cross-Sectional Technologies | 5 | Active |
| US7221023B2 | Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same | Emerging Cross-Sectional Technologies | 4 | Expired |
| US11094800B2 | Integrated circuit device and method of manufacturing the same | Electricity | 3 | Active |
| US9548260B2 | Semiconductor devices including conductive plug | Electricity | 1 | Active |
| US6869891B2 | Semiconductor device having groove and method of fabricating the same | Emerging Cross-Sectional Technologies | 1 | Expired |
| US11715786B2 | Integrated circuit device and method of manufacturing the same | Electricity | 0 | Active |
| US7009255B2 | Semiconductor device having punch-through structure off-setting the edge of the gate electrodes | Electricity | 0 | Expired |
| US7259069B2 | Semiconductor device and method of manufacturing the same | Electricity | 0 | Expired |
| US7833864B2 | Method of doping polysilicon layer that utilizes gate insulation layer to prevent diffusion of ion implanted impurities into underlying semiconductor substrate | Electricity | 0 | Active |
| US7268043B2 | Semiconductor device and method of manufacturing the same | Electricity | 0 | Active |
| US9466703B2 | Method for fabricating semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.