Lateral-only photoresist trimming for sub-80 nm gate stack
US6869899B2 · kind B2 · utility
15Cited by
3References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2001 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Dec 30, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/95
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates generally to lithographic patterning of very small features. In particular, the invention relates generally to patterning of semiconductor circuit features smaller than lithographically defined using either conventional optical lithography or next generation lithography techniques. The invention relates more particularly, but not by way of limitation, to lateral trimming of photoresist images.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.