Transistor structure with thick recessed source/drain structures and fabrication process of same

US6870225B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Andres Bryant · South Burlington, US
• Mark D. Jaffe · Shelburne, US

Key dates

• Filing date: Nov 2, 2001
• Grant date: Mar 22, 2005
• Expiry date: Feb 28, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

An improved transistor structure that decreases source/drain (S/D) resistance without increasing gate-to-S/D capacitance, thereby increasing device operation. S/D structures are formed into recesses formed on a semiconductor wafer through a semiconductor layer and a first layer of a buried insulator having at least two layers. A body is formed from the semiconductor layer situated between the recesses, and the body comprises a top body surface and a bottom body surface that define a body thickness. Top portions of the S/D structures are within and abut the body thickness. An improved method for forming the improved transistor structure is also described and comprises: forming recesses through a semiconductor layer and a first layer of a buried insulator so that a body is situated between the recesses; and forming S/D structures into the recesses so that top portions of the S/D structures are within and abut a body thickness.