Method of manufacturing transparent conductor film and compound semiconductor light-emitting device with the film
US6872649B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2002 |
| Grant date | Mar 29, 2005 |
| Priority date | — |
| Expiry date | Aug 20, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/94
Abstract
A light emitting-layer is provided on a substrate. A p-type semiconductor layer is provided on the light-emitting layer. An upper electrode is provided on the p-type semiconductor layer. The upper electrode includes an Au thin film coming into contact with the p-type semiconductor layer and an n-type transparent conductor film formed thereon. The n-type transparent conductor film is formed by laser ablation. Particularly, the method involves placing a substrate in a vacuum chamber, placing a target of the film material in the chamber, introducing oxygen into the chamber, laser-irradiating the target to emit atoms or molecular ions by ablation, and then depositing and oxidizing the atoms or ions to grow the transparent conductor film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.